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CYStech Electronics Corp.
N-Channel Logic Level Enhancement Mode Power MOSFET
Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2009.02.04 Page No. : 1/9
MTN20NF06J3
Features
* VDS=60V, ID=50A, RDS(ON)=22m * Low Gate Charge * Simple Drive Requirement * RoHS compliant package * Repetitive Avalanche Rated * Fast Switching Characteristic
BVDSS 60V ID 50A RDSON 22m
Symbol
MTN20NF06J3
Outline
TO-252
GGate DDrain SSource
GDS
Absolute Maximum Ratings (TC=25C)
Parameter Symbol Limits Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25C Continuous Drain Current @ TC=100C Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC=25) Derates above 25C Operating Junction and Storage Temperature
VDS VGS ID
(Note 1) (Note 1) (Note 2) (Note 1) (Note 3)
IDM IAR EAS EAR dv/dt PD Tj, Tstg
60 20 50 35 200 50 447 6 7 60 0.4 -55~+175
V V A
mJ V/ns W W/C C
Note : *1.Repetitive Rating : Pulse width limited by maximum junction temperature *2. L=230H, IAS=50A,VDD=25V, starting TJ=+25 *3. ISD50A, dI/dt<100A/s, VDDBVDSS, TJTj(max).
MTN20NF06J3 CYStek Product Specification
CYStech Electronics Corp.
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Maximum Lead Temperature for Soldering purpose
Note : 1.6mm from case, for 10 seconds
Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2009.02.04 Page No. : 2/9
(Note)
Symbol Rth,j-c Rth,j-a TJ
Value 2.5 100 275
Unit C/W C/W C
Characteristics (Tc=25C, unless otherwise specified)
Symbol Static BVDSS BVDSS/Tj VGS(th) GFS IGSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *IS *ISM *VSD *trr *Qrr Min. 60 2 Typ. 0.06 2.8 28 19 19 31 8 13 15 105 60 65 1180 440 65 52 75 Max. 4 100 1 10 22 22 41 40 220 130 140 1540 580 90 50 200 1.5 Unit V V/C V S nA A m Test Conditions VGS=0, ID=250A Reference to 25C, ID=250A VDS = VGS, ID=250A VDS =10V, ID=25A VGS=20 VDS =60V, VGS =0 VDS =48V, VGS =0, TC=150C VGS =10V, ID=30A VGS =10V, ID=12A ID=50A, VDS=48V, VGS=10V VDD=30V, ID=25A, VGS=10V, RG=25
nC
ns
pF
VGS=0V, VDS=25V, f=1MHz
A V ns nC IS=50A, VGS=0 IS=50A, dIF/dt=100A/s, VGS=0
*Pulse Test : Pulse Width 300s, Duty Cycle2%
Ordering Information
Device MTN20NF06J3 Package TO-252 (RoHS compliant) Shipping 2500 pcs / Tape & Reel Marking 20NF06
MTN20NF06J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2009.02.04 Page No. : 3/9
MTN20NF06J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2009.02.04 Page No. : 4/9
MTN20NF06J3
CYStek Product Specification
CYStech Electronics Corp.
Test Circuit and Waveforms
Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2009.02.04 Page No. : 5/9
MTN20NF06J3
CYStek Product Specification
CYStech Electronics Corp.
Test Circuit and Waveforms(Cont.)
Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2009.02.04 Page No. : 6/9
MTN20NF06J3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2009.02.04 Page No. : 7/9
Carrier Tape Dimension
MTN20NF06J3
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product Pb-free devices Peak Temperature 260 +0/-5 C
Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2009.02.04 Page No. : 8/9
Soldering Time 5 +1/-1 seconds
Recommended temperature profile for IR reflow
Note : All temperatures refer to topside of the package, measured on the package body surface.
Profile feature Average ramp-up rate (Tsmax to Tp) Preheat -Temperature Min(TS min) -Temperature Max(TS max) -Time(ts min to ts max) Time maintained above: -Temperature (TL) - Time (tL) Peak Temperature(TP) Time within 5C of actual peak temperature(tp) Ramp down rate Time 25 C to peak temperature
Sn-Pb eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds 240 +0/-5 C 10-30 seconds 6C/second max. 6 minutes max.
Pb-free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds 260 +0/-5 C 20-40 seconds 6C/second max. 8 minutes max.
MTN20NF06J3
CYStek Product Specification
CYStech Electronics Corp.
TO-252 Dimension
A C
Spec. No. : C431J3 Issued Date : 2008.12.11 Revised Date : 2009.02.04 Page No. : 9/9
Marking:
B L F G
D
Device Name Date code
20NF06
3 H E K 2 I 1 J
Style: Pin 1.Gate 2.Drain 3.Source
3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283
Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80
DIM G H I J K L
Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630
Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead : KFC; tin plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN20NF06J3
CYStek Product Specification

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